职称：

副教授   硕士生导师

研究方向：

闪存芯片、固态存储系统架构及可靠性设计；

存内计算芯片设计。

邮箱：huangj573@mail.sysu.edu.cn

主要从事半导体存储技术相关领域的研究。曾在SanDisk、Hynix、Micron等多家半导体公司负责TLC、QLC、3D-Xpoint等先进存储芯片及固态存储系统研发。发表期刊及会议论文30多篇，存储器件及系统设计相关美国及国际专利授权多项。

教育经历：

加州大学河滨分校      电气工程学系      博士

南京大学      微电子学与固态电子学      硕士

南京大学      应用物理学(微电子学专业)      学士

学术活动：

IEEE Electron Device Letter、IEEE Transactions on Electron Devices、Solid-State Electronics、AIP Advances、Applied Physics A，Scientific Reports等期刊评委。

近年论文：

[1] R, Zhou, Y. Wang, J. Huang*, Z.Xu, X. Liu, X. Zhang, and Z. Yu, “A Half-Bit-Per-Cell Strategy for Enhancing Flash Memory Reliability in Harsh Environments”, IEEE International Reliability Physics Symposium (IRPS 2025).

[2] R. Zhou, J. Huang*, X. Liu, Y. Wang, X. Zhang, Y. Peng, and Z. Yu, “A Low-Complexity True Random Number Generation Scheme Using 3D-NAND Flash Memory”, Design, Automation and Test in Europe Conference (DATE 2025).

[3] X. Zhang, J. Huang*, X. Liu, B. Zhong, and Z. Yu, “An Adaptive Read Control Voltage Scheme for Reliability Enhancement of Flash-Based In-Memory Computing Architecture for Neural Network”, IEEE Transactions on Device and Materials Reliability 24(3), 422 - 427 (2024).

[4] R. Zhou; Y. Wang; J. Huang*; X. Zhang; X. Liu, and Z. Yu, “An Adaptive Re-Read Strategy for Mitigating Temporary Read Errors in 3D-NAND Flash Solid-State Drives”, 13th Non-Volatile Memory Systems and Applications Symposium (NVMSA 2024).

[5] R. Zhou, J. Huang*, X. Liu, Y. Wang, X. Zhang, Y. Peng, and Z. Yu, “Random Number Generation from 3D-NAND Flash Memory Using Shallow Charge Trap Related Short-Term Retention Errors”, IEEE 17th International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2024).

主要专利：

[1] Jian Huang, Zhenming Zhou; RECOVERY MANAGEMENT OF RETIRED SUPER ANAGEMENT UNITS (US 11,183,267), 2021.                                             

[2] Jian Huang, Zhenming Zhou, Xu Zhongguang, Lang Murong; ADAPTIVE FREQUENCY CONTROL FOR HIGH-SPEED MEMORY DEVICES (US 11,449,377), 2022.

[3] Zhenming Zhou, Jian Huang, Jiangli Zhu; ADJUSTING READ THROUGHPUT LEVEL FOR A DATA RECOVERY OPERATION (US 11,467,900), 2022.                                                                                                           

[4] Jian Huang, Zhenming Zhou, Zhenlei Shen; CODEWORD ERROR LEVELING FOR 3DXP MEMORY DEVICES (US 11,720,273), 2023.                    

[5] Jian Huang, Zhenming Zhou; GENERATING CODEWORDS WITH DIVERSE PHYSICAL ADDRESSES FOR 3DXP MEMORY DEVICES (US 11,734,190), 2023.

[6] 一种多比特矩阵向量乘法计算单元、阵列及其工作方法; 虞志益,刘显平,李楠,黄健,张鹏(ZL 2023 1 1675859.8).

[7] 存算一体的数据处理方法及存算一体的电路系统; 黄健, 张莘睿, 刘显平, 虞志益 (CN202211580639.2)