职称：
副教授 博士生导师 中山大学“百人计划”
学术经历：
北京大学 信息科学技术学院 博士 （直博）
湖南大学 物理与微电子科学学院 学士
研究方向：
集成电路可靠性设计，先进集成技术热管理，AI赋能集成电路EDA
正在招收：硕士研究生、博士研究生、博士后研究人员、专职科研人员。
欢迎对器件/电路可靠性设计（芯片抗老化、辐照效应与抗辐照加固设计）、EDA与AI+应用方向感兴趣的同学联系！
欢迎本科生加入科研团队（长期有效）！
科研实验室微信公众号CREST Lab，欢迎关注！
联系邮箱：chenwangy@mail.sysu.edu.cn
学术活动：
以第一作者/通讯作者在领域核心期刊IEEE Transaction on Electron Devices (T-ED), IEEE Electron Device Letters （EDL），及微电子器件领域国际顶尖会议IEEE Electron Device Meeting（IEDM）等发表学术论文40余篇，合作共计60余篇，申请/授权发明专利10余件，获批软件著作权8项，主持国家自然科学基金青年项目、科技委项目、中央高校基本科研业务费、广东省自然科学基金青年及面上项目，承担研究所、EDA相关企业的技术开发项目10余项，参与多个国家重点研发项目以及横向项目（与华为、上海华力微电子开展合作），其中部分成果已完成产业转化。2021年获得北京大学优秀毕业生称号，2020年获得IEEE EDS PhD Student Fellowship（亚洲唯一，全球仅3名/年），2018年获得IEEE IPFA Best Paper Award，广东省光电信息处理芯片与系统重点实验室骨干成员，担任TED，JEDS，TVLSI，TCAD，TDMR，Microelectronics Reliability，Journal of Semiconductor等学术期刊审稿人，获T-ED期刊金牌评委、国家及省部级竞赛优秀指导老师、学院“最美教师”、“最佳指导教师奖”等称号。
承担项目：
主持国家、省部级、企业及研究所项目10余项，参与6项
1.国家自然科学基金青年项目，在研，主持
2.科技委项目，在研，主持
3.广东省区域联合基金-青年基金项目，结题，主持
4.广东省基础与应用研究基金-面上项目，在研，主持
5.科技基金稳定支持项目，结题，主持
6.企业及研究所横向项目主持5项，在研1项，结题4项
7.科技创新2030重大专项，在研，参与
8.中山大学GF科研创新发展项目，在研，主持
9.中山大学GF科研平台培育项目，在研，参与
学生培养：
指导本科生创新创业/创新实践/TTL训练计划项目，部分项目：
1. 集成电路片上热传感器布局优化算法及其应用研究，省级，获评优秀
2. 面向航天器的抗辐照电路TCAD仿真与优化设计
3. 基于电路老化的硬件木马设计研究
4. 集成电路可靠性退化预测及在线监测电路研究
5. 面向可制造性设计的可靠性表征结构与建模技术研究
6. 射频器件SPICE建模及参数提取方法研究
7. 面向芯粒集成的三维温度感知技术研究
8. 抗辐照SRAM存算一体芯片设计
指导学生参加国家及省部级学科竞赛，部分获奖列表：
1.集成电路EDA开发应用技能竞赛广东省选拔赛，一等奖，2022.01
2.集成电路EDA开发应用技能竞赛全国赛，二等奖，2022.09
3.集成电路创新创业大赛-华大九天杯，全国赛二等奖，2023.09
4.集成电路创新创业大赛-STIC杯，华南赛区决赛一等奖，2022.08
5.集成电路创新创业大赛-STIC杯，全国赛二等奖，2022.09
6.集成电路创新创业大赛-Li杯，华南赛区决赛二等奖，2022.08
7.集成电路创新创业大赛-Li杯，全国赛三等奖，2022.09
8.集成电路EDA精英挑战赛，全国赛二等奖，2022.12
9.广东省大学生电子设计竞赛，一等奖，2022.08
10.广东省大学生电子设计竞赛，三等奖，2022.08
11.集成电路EDA精英挑战赛，全国赛三等奖，2023.11
12.集成电路创新创业大赛-华大九天杯，华南赛区决赛一等奖，2023.07
13.集成电路创新创业大赛-紫光教育杯，华南赛区决赛二等奖，2024.07
14.集成电路创新创业大赛-紫光教育杯，华南赛区决赛二等奖，2024.07
15.集成电路创新创业大赛-紫光教育杯，华南赛区决赛一等奖，2025.07
16.集成电路创新创业大赛-紫光教育杯，华南赛区决赛一等奖，2025.07
17.集成电路创新创业大赛-雨骤杯，华南赛区决赛三等奖，2025.07
部分学术成果：
[1] B. Yin, L. Cai, H. Zhang, and W. Chen*, “A Multiphysics Simulation Framework for Electromigration Risk Assessment in Modern Interconnects,” IEEE Transactions on Electron Devices (T-ED), pp. 1–7, 2025.
[2] W. Chen, et al., “A Comprehensive Modeling Framework for Charge-Sharing and Bias-Dependent Single Event Transient Prediction in FinFETs,” IEEE Transactions on Device and Materials Reliability (TDMR), pp. 1–7, 2025.
[3] W. Chen, et al., “Open Model Interface Assisted NBTI-Aware Design With Dual-Vth Logic Synthesis Strategy for Reliability Improvement,” IEEE Transactions on Device and Materials Reliability (TDMR), pp. 1–6, 2025.
[4] Z. Zhang, W. Chen*, J. Lin, L. Cai, “Comparative study of single event upset susceptibility in the Complementary FET (CFET) and FinFET based 6T-SRAM,” Microelectronics Reliability (MR), vol. 164, p. 115552, Jan. 2025.
[5] W. Chen, et al., “Mutual Information-Driven Thermal Sensor Planning Method Assisting On-chip Temperature Monitoring at Device Level Granularity,” in 2025 3rd International Symposium of Electronics Design Automation (ISEDA), May 2025, pp. 1–6.
[6] W. Chen, et al., “A physics-based electromigration model for advanced interconnects,” Microelectronics Reliability (MR), vol. 173, p. 115862, Oct. 2025.
[7]L. Cai, Y. Chen, H. Zhang, J. Lin, and W. Chen*, “Insight Into Electromigration Reliability of Buried Power Rail With Alternative Metal Material,” IEEE Trans. Electron Devices, vol. 71, no. 1, pp. 418–424, Jan. 2024.
[8]M. Zheng, W. Chen*, Y. Lyu, H. Chen, J. Chen, and L. Cai, “Time-dependent statistical NBTI model for aging assessment in circuit level implemented with open model interface,” Microelectronics Reliability, vol. 151, p. 115254, Dec. 2023.
[9]Wangyong Chen, et al., “Determining the Zero-Temperature-Coefficient Point From Device Simulation to Circuit for Improving Temperature Variation Immunity,” IEEE Transactions on Electron Devices (T-ED), vol. 70, no. 3, pp. 864–870, January 2023.
[10]Yaoyang Lyu, Wangyong Chen*, et al., “Machine Learning Assisted Device Modeling with Process Variations for Advanced Technology,” IEEE Journal of the Electron Devices Society (JEDS), vol. 11, pp. 303–310, May 2023.
[11]Yaoyang Lyu, Wangyong Chen*, et al., “Machine Learning Assisted Nanoscale Device Modeling for Nanosheet FETs with Process Variations,” IEEE Silicon Nanoelectronics Workshop (SNW), pp. 103–104, June 2022.
[12]Linlin Cai, Mingyue Zheng, Yaoyang Lyu, and Wangyong Chen*, “Thermal-Aware EM Reliability for Advanced Metal Interconnects of Complementary FET,” IEEE Transactions on Electron Devices (T-ED), vol. 69, no. 5, pp. 2573–2578, May 2022.
[13]Bin Liang, Deng Luo, Qian Sun, Wangyong Chen*, “Layout based radiation hardening techniques against single-event transient,” Microelectronics Reliability (MR), vol. 135, pp. 114572, June 2022.
[14]Bin Liang, Deng Luo, Qian Sun, Yanrong Chen, Kangkai Zhang, and Wangyong Chen*, “Investigation of PVT Variation on Single-Event Transient Effect Assisted with Hardened Layout Techniques,” Japanese Journal of Applied Physics (JJAP), vol. 62, no.1 , pp. 016001-1-7, August 2022.
[15]Wangyong Chen, et al., "Thermal Crosstalk Characterization Using Temperature Dependent Leakage Current Through Gate Stacks," IEEE Electron Device Letters (EDL), vol. 42, no. 6, pp. 792-795, June 2021.
[16]Wangyong Chen, et al., “New Measurement Method for Self-heating in Silicon-on-Insulator MOSFETs based on Shared Series Resistance,” IEEE Electron Device Letters (EDL), vol. 41, no. 2, pp. 212–215, February 2020.
[17]Wangyong Chen, et al., “Analytical Model for Interface Traps dependent Back Bias Capability and Variability in Ultrathin Body and Box FDSOI MOSFETs,” IEEE Transactions on Electron Devices (T-ED), vol.67, no. 11, pp. 4573–4577, November 2020.
[18] Wangyong Chen, et al., “Investigation of PBTI Degradation in Nanosheet nFETs with HfO2 Gate Dielectric by 3D KMC Method,” IEEE Transactions on Nanotechnology (T-NANO), vol. 18, pp. 385–391, April 2019.
[19]Wangyong Chen, et al., “Investigation of Degradation under Arbitrary Bias Conditions in HfO2 based nanosheet nFETs by 3D kinetic Monte-Carlo Method,” Japanese Journal of Applied Physics (JJAP), vol. 58, pp. SBBA13, March 2019.
[20]Wangyong Chen, et al., “Statistical Simulation of Self-heating induced Variability and Reliability with Application to Nanosheet-FETs based SRAM,” Microelectronics Reliability (MR), vol. 98, pp. 63–68, April 2019.
[21] Wangyong Chen, et al., “Efficient Variability- and Reliability-aware Device-Circuit Co-Design: From Trap Behaviors to Circuit Performance,” IEEE International Electron Devices Meeting (IEDM), pp. 947-950, December 2019.
[22] Wangyong Chen, et al., “Analytical Multistage Thermal Model for FEOL Reliability Considering Self- and Mutual- Heating,” IEEE Transactions on Electron Devices (T-ED), vol. 65, no. 9, pp. 3633–3639, September 2018.
[23]Wangyong Chen, et al., “Entire Bias Space Statistical Reliability Simulation By 3D KMC Method and Its Application to the Reliability Assessment of Nanosheet FETs based Circuits,” IEEE International Electron Devices Meeting (IEDM), pp. 775-778, December 2018.
[24]Wangyong Chen, et al., “Trap Dynamics based 3D Kinetic Monte Carlo Simulation for Reliability Evaluation of UTBB MOSFETs,” IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), September 2019.
[25]Wangyong Chen, et al., “Experiment Characterization of Front and Back Interfaces Impact on Back Gate Modulation in UTBB-FDSOI MOSFETs,” IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), July 2019.
[26]Wangyong Chen, et al., “Self-heating induced Variability and Reliability in Nanosheet-FETs Based SRAM,” IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), July 2018. (Best Paper Award)
[27]Wangyong Chen, et al., “Investigation of Full Bias Space Degradation in Nanosheet nFETs with HfO2 Gate Dielectric by 3D KMC Method,” International Conference on Solid State Devices and Materials (SSDM), September 2018.
[28]Wangyong Chen, et al., “Accurate Self-heating Assessment Employing Multi-stage Thermal RC Network,” IEEE International Symposium on VLSI-Technology, Systems and Application (VLSI-TSA), April 2018.
