职称：
副教授 博士生导师 中山大学“百人计划”
学术经历：
北京大学 信息科学技术学院 博士（直博）
武汉大学 物理科学与技术学院 学士
研究方向：
集成电路互连线可靠性研究，先进集成技术热管理，集成芯片辐照效应及加固设计。
正在招收：硕士研究生、博士研究生、博士后研究人员、专职科研人员，欢迎联系！
欢迎感兴趣的本科生加入科研团队！
联系邮箱：caillin3@mail.sysu.edu.cn
学术活动：
在微电子领域核心期刊IEEE Transactions on Electron Device (T-ED), IEEE Electron Device Letters（EDL），及国际电子器件顶级会议IEEE International Electron Devices Meeting（IEDM）等累计发表论文50余篇，申请软件著作权8项，申请专利9项，广东省数字电网技术重点实验室负责人，广东省高端集成电路设计与集成技术重点实验室核心成员，广东省高校集成电路设计与制造重点实验室核心成员，承担多个国家重点研发项目及产学研合作项目。曾赴美国、意大利、新加坡等国家进行学术交流，担任多个国际期刊评委包括IEEE Transactions on Electron Device，IEEE Journals of Electron Devices Society等。
承担项目：
[1] 国家自然科学基金青年项目1项，在研
[2] 国家科技创新重大项目1项，在研
[3] 广东省面上项目1项，在研
[4] 科研横向项目2项，在研
[5] 军工横向项目2项，在研
主讲课程：
《EDA核心算法》、《EDA软件开发与应用》、《电子设计自动化》、《微纳电子器件》
部分学术著作：
[1] Linlin Cai, et al., “Insight Into Electromigration Reliability of Buried
Power Rail With Alternative Metal Material”, IEEE Transactions on Electron Devices, vol. 71, pp. 418-424, January 2024.
[2] Linlin Cai, et al., “Electromigration of Backside Power Delivery Networks for PPA-Reliability Tradeoffs at N2 Node ”, IEEE International Electron Devices Meeting, pp. 1-4, December 2023.
[3] Linlin Cai, et al., “Thermal-Aware EM Reliability for Advanced Metal Interconnects of Complementary FET”, IEEE Transactions on Electron Devices, vol. 69, pp. 2573-2578, May 2022.
[4] Linlin Cai, et al., “A Physics-based Electromigration Reliability Model for Interconnects Lifetime Prediction”, SCIENCE CHINA Information Sciences, November, 2021.
[5] Linlin Cai, et al., “A Physics-Based Analytic Model of Analog Switching Resistive Random Access Memory”, IEEE Electron Device Letters, vol. 41, pp. 236–239, February 2020.
[6] Linlin Cai, et al., “Self-heating aware EM Reliability Prediction of Advanced CMOS Technology by Kinetic Monte Carlo Method”, Microelectronics Reliability, vol. 107, pp. 113626.1-6, April 2020.
[7] Linlin Cai, et al., “Insight into Effects of Oxygen Reservoir Layer and Operation Schemes on Data Retention of HfO2-based RRAM”, IEEE Transactions on Electron Devices, vol. 66, no. 9, pp. 3822–3827, September 2019.
[8] Linlin Cai, et al., “3D Kinetic Monte Carlo Simulation of Electromigration in Multi-layer Interconnects”, IEEE International Conference on Simulation of Semiconductor Processes and Devices, September 2019.
[9] Linlin Cai, et al., “Layout Design Correlated With Self-Heating Effect in Stacked Nanosheet Transistors”, IEEE Transactions on Electron Devices, vol. 65, no. 6, pp. 2647–2653, June 2018.
[10] Linlin Cai, et al., “A Physics-based Thermal Model of Nanosheet MOSFETs for Device-Circuit Co-design”, IEEE International Electron Devices Meeting, pp. 779-782, December 2018.
